| PART |
Description |
Maker |
| C961U392MYWDBA7317 |
Ceramic, Safety, C900_Y, 3900 pF, 20%, Y5U, Lead Spacing = 10mm
|
Kemet Corporation
|
| LNW2W332MSEG LNW2W332MSEH LNW2H102MSEG LNW2H152MSE |
3.3 V PureEdge™ Crystal (25MHz) to Dual HCSL Clock Generator with selectable (25/100/125/200 MHz) output frequencies
Analog Multiplexer/Demultiplexer
Single Buffer Non-Inverting, TTL Level
Single Inverter, Schmitt Input,TTL Level
Zener Diode 500 mW 2.5 V 5% SOD-123
Analog Multiplexers/Demultiplexers with Injection Current Effect Control
ALUMINUM ELECTROLYTIC CAPACITORS CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350 V, 3900 uF, CHASSIS MOUNT
LOG CMOS BUS INTRFCE OCTL CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3900 uF, CHASSIS MOUNT
|
Nichicon Corporation
Nichicon, Corp.
|
| TLM825SA |
8 outlet, 25-ft cord, 3900 joule, Metal Safety Surge Suppressor - Rugged, Safe Surge Suppression for Industrial/Automotive/Factory Environments
|
List of Unclassifed Manufac...
|
| RC0603J392CS RC0603J271CS RC0603J474CS |
Thick - Film chip RESISTOR
Samsung electro-mechanics
RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 5 %, 250 ppm, 3900 ohm, SURFACE MOUNT, 0201 CHIP
|
Samsung semiconductor
|
| DCR1595SW39 DCR1595SW37 DCR1595SW38 |
3735 A, 3900 V, SCR
3735 A, 3700 V, SCR
3735 A, 3800 V, SCR
|
|
| B82725-J2602-N1 B82725-J2802-N1 |
2 ELEMENT, 3900 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
2 ELEMENT, 2700 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
|
EPCOS AG
|
| 35VXP3900MST25X35 100VXP820MST22X35 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 35 V, 3900 uF, THROUGH HOLE MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 100 V, 820 uF, THROUGH HOLE MOUNT RADIAL LEADED, CAN
|
Bourns, Inc.
|
| HI4-0508A-8 |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection; Temperature Range: -55°C to 125°C; Package: 20-LCC 8-CHANNEL, SGL ENDED MULTIPLEXER, CQCC20
|
Intersil, Corp.
|
| FDD8426H |
40V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼?
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
|
Fairchild Semiconductor
|
| AL0510A-392M-S-A AL0510AT-223K-S-A AL0510AT-253K-S |
1 ELEMENT, 3900 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 22000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 25000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2700 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 12000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 30000 uH, GENERAL PURPOSE INDUCTOR
|
YAGEO CORP
|
| 3N191 X3N190-91 3N190 3N190-91 X3N191 |
50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
30V N-Channel PowerTrench MOSFET
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
|
Calogic LLC
Calogic LLC
CALOGIC[Calogic, LLC]
|
| FDS8858CZ |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
|
Fairchild Semiconductor
|
|
